A 1 mG lateral CMOS-MEMS accelerometer
Conference Paper, Proceedings of 13th IEEE International Conference on Micro Electro Mechanical Systems (MEMS '00), pp. 502 - 507, 2000
Abstract
This paper reports a lateral CMOS-MEMS accelerometer with a measured noise floor of 1 mG//spl radic/(Hz) and a dynamic range larger than 13 G. The accelerometer is fully compatible with conventional CMOS processes enabling the integration of most of the conditioning circuits. It is fabricated in a three metal layer 0.5 /spl mu/m CMOS process followed by a two-step dry etch release. An improved curl matching technique is utilized to solve the out-of-plane curl problem. A new differential amplifier is used for the capacitive sensing interface. The CMOS micromachining process used in this project is described. The design of accelerometer, system schematic applying force-balance feedback and experimental test results are presented.
BibTeX
@conference{Luo-2000-7970,author = {Hao Luo and Gary K. Fedder and Richard Carley},
title = {A 1 mG lateral CMOS-MEMS accelerometer},
booktitle = {Proceedings of 13th IEEE International Conference on Micro Electro Mechanical Systems (MEMS '00)},
year = {2000},
month = {January},
pages = {502 - 507},
}
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