Power voltage-current converter using quasi-complementary MOSFET current mirrors
Journal Article, Electronics Letters, Vol. 47, No. 21, pp. 1173 - 1175, October, 2011
Abstract
A voltage-current converter is described having a quasi-complementary class-AB architecture that is particularly suited to implementation using discrete power MOSFETs. High-voltage mirror designs are presented, enabling the construction of sources with kilovolt compliance range, tens of watts of output power and greater than 100 kHz bandwidth. V output impedance and distortion below 1% can be obtained with no trimming or transistor matching.
BibTeX
@article{MacLachlan-2011-7399,author = {Robert MacLachlan and Cameron Riviere},
title = {Power voltage-current converter using quasi-complementary MOSFET current mirrors},
journal = {Electronics Letters},
year = {2011},
month = {October},
volume = {47},
number = {21},
pages = {1173 - 1175},
keywords = {Controlled current source, piezoelectric charge control},
}
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